Intel will present three technical papers at the annual worldly Electron Devices Meeting (IEDM) in Washington, D.C. on Dec 10-12. Two papers will supply more details behind Intel’s breakthrough 45nm process technology based on its Hafnium-based high-k metal gate transistor formula. Intel launched the world’s first 45nm processors based on that new transistor technology last month. In September, Intel announced it had working 32nm SRAM chips using its second generation high-k metal gate transistor technology

and is on track to ramp 32nm in 2009. Intel will additionally discuss progress made on research and development for future device scaling in the middle of the next decade with the development of high-performance quantum well field effect transistors using a new material called Indium Gallium Arsenide. These transistors are promising device candidates for future high-speed, low-power digital logic applications. To learn more about Intel IEDM papers, go here.

Original post by Steve