Fujitsu today announced the development of a new type of resistive RAM(ReRAM), a type of non-volatile memory, which combines low capability consumption with limited fluctuation of resistance value. By changing the structure of the ReRAM by adding titanium (Ti) to nickel oxide (NiO), and by limiting the current flow from the transistor, Fujitsu Labs has successfully reduced the current needed to erase memory to 100 micro-amperes or less. Furthermore, even in high-speed erasure operations requiring only 5 nanoseconds,

fluctuation of resistance value which affects the device’s quality has been reduced to one-tenth (1/10th) that of conventional ReRAMs.

Fujitsu views the new ReRAM as an alternative to flash memory that combines high speed and low ability consumption, in a low-cost embedded memory. ReRAM is a type of memory that uses material for which the resistance value changes when voltage is applied. ReRAM is amenable to miniaturization and can be manufactured inexpensively, making it appealing as an alternative to flash memory.